bsb015n04nx3g Infineon Technologies Corporation, bsb015n04nx3g Datasheet - Page 3

• Manufacturer Part Number: bsb015n04nx3g
• Description: Optimostm3 Power- Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=30 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=20 V, V
=20 V, I
=0 to 10 V
=0 to 10 V
=20 V, V
=0 V, I
F
F
G
DS
=30 A,
=I
D
=1.6 Ω
GS
GS
=30 A,
=20 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
9000
2300
0.81
typ.
107
101
6.4
7.6
4.8
91
23
36
41
26
13
28
86
BSB015N04NX3 G
-
-
-
12000 pF
max.
3100
142
134
400
89
50
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
V
nC
A
V
nC
2009-05-11