ndf10n60zh ON Semiconductor, ndf10n60zh Datasheet - Page 4

• Manufacturer Part Number: ndf10n60zh
• Description: Ndf10n60zh Product Preview N-channel Power Mosfet 600 V, 0.75 W
• Manufacturer: ON Semiconductor

3500
3000
2500
2000
1500
1000
1000
500
100
10
0
0
1
Figure 10. Resistive Switching Time Variation
V
I
V
D
DD
GS
C
= 10 A
25
rss
V
= 300 V
= 10 V
C
C
DS
Figure 8. Capacitance Variation
oss
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
50
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
75
100
10
0.01
0.1
10
1
125
0
V
Figure 7. Drain−to−Source Leakage Current
GS
TYPICAL CHARACTERISTICS
150
V
T
f = 1 MHz
= 0 V
V
J
100
GS
DS
= 25°C
= 0 V
, DRAIN−TO−SOURCE VOLTAGE (V)
175
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t
t
t
d(off)
t
d(on)
r
f
200
200
100
vs. Voltage
4
20
15
10
5
0
300
0
Q
10
8
6
4
2
0
gs
5
0.4
T
T
J
J
400
V
= 150°C
= 100°C
10
DS
Drain−to−Source Voltage vs. Total Charge
V
T
J
GS
Figure 11. Diode Source Current vs.
= 25°C
V
0.5
15
Q
SD
= 0 V
g
Figure 9. Gate−to−Source and
500
, SOURCE−TO−DRAIN VOLTAGE (V)
, TOTAL GATE CHARGE (nC)
20
Q
gd
0.6
QT
25
Forward Voltage
600
30
0.7
35
40
V
0.8
GS
I
T
D
45
J
= 10 A
= 25°C
50 55
0.9
400
300
200
100
0
1.0