ndf10n60zh ON Semiconductor, ndf10n60zh Datasheet - Page 3

• Manufacturer Part Number: ndf10n60zh
• Description: Ndf10n60zh Product Preview N-channel Power Mosfet 600 V, 0.75 W
• Manufacturer: ON Semiconductor

0.80
0.75
0.70
0.65
0.60
20
18
16
14
12
10
2.7
2.2
1.7
1.2
0.7
0.2
8
6
4
2
0
−50
0
5
Figure 3. On−Resistance vs. Gate Voltage
T
Figure 5. On−Resistance Variation with
V
J
−25
Figure 1. On−Region Characteristics
GS
= 25°C
V
I
V
D
4
DS
GS
T
= 5 A
= 10 V
6
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
8
7.0 V
Temperature
25
7
12
50
10 V
8
16
75
V
GS
TYPICAL CHARACTERISTICS
= 15 V
T
I
D
100
J
= 25°C
= 5 A
20
9
6.6 V
6.4 V
6.2 V
5.8 V
5.6 V
5.4 V
6.0 V
5.0 V
125
http://onsemi.com
24
10
150
3
1.15
1.05
0.95
0.80
0.75
0.70
0.65
0.60
1.1
1.0
0.9
20
18
16
14
12
10
8
6
4
2
0
−50
2
2.5
Figure 6. BVDSS Variation with Temperature
Figure 4. On−Resistance vs. Drain Current
V
−25
DS
V
= 30 V
Figure 2. Transfer Characteristics
T
3
GS
T
J
J
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
5.0
0
I
D
, DRAIN CURRENT (A)
and Gate Voltage
4
25
T
J
= 150°C
7.5
I
50
D
5
= 1 mA
T
75
J
= 25°C
6
T
J
= −55°C
100
10
V
GS
7
125
= 10 V
12.5
150
8