STB34NM60N STMicroelectronics, STB34NM60N Datasheet - Page 5

• Manufacturer Part Number: STB34NM60N
• Description: N-channel 600 V, 0.092 Ω , 29 A Mdmesh™ Ii Power Mosfet In D²pak, To-220fp, To-220, To-247
• Manufacturer: STMicroelectronics

STB34NM60N, STF34NM60N, STP34NM60N, STW34NM60N
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17740 Rev 6
I
I
di/dt=100 A/µs
(see
I
di/dt=100 A/µs,
T
(see
SD
SD
SD
J
= 150 °C
Test conditions
= 29 A, V
= 29 A, V
= 29 A,V
Figure
Figure
20)
20)
DD
GS
DD
= 60 V
= 0
= 60 V
Electrical characteristics
Min.
-
-
-
-
Typ.
408
480
39
10
42
8
Max.
116
1.6
29
Unit
µC
µC
ns
ns
A
A
V
A
A
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