MD7P19130H Freescale Semiconductor, Inc, MD7P19130H Datasheet - Page 2

• Manufacturer Part Number: MD7P19130H
• Description: Rf Power Field Effect Transistors N-channel Enhancement -mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

MD7P19130HR3 MD7P19130HSR3
2
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Measurement made with device in single - ended configuration.
4. Part internally matched both on input and output.
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 40 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
(3)
DS
D
D
D
(3)
(3)
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
GS
= 316 μAdc)
= 1250 mAdc, Measured in Functional Test)
= 3.16 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(3,4)
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
V
V
V
ACPR
I
I
I
C
PAR
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
DQ
η
oss
rss
iss
ps
D
= 1250 mA, P
Symbol
R
18.5
Min
1.2
1.9
0.1
5.6
—
—
—
—
—
—
27
—
—
θJC
out
= 40 W Avg., f = 1932.5 MHz and f =
Typ
586
348
- 36
- 16
2.7
0.2
1.2
20
30
—
—
—
1C (Minimum)
2
6
IV (Minimum)
A (Minimum)
Value
Class
Freescale Semiconductor
0.31
0.36
(1,2)
- 32.5
Max
21.5
2.7
3.4
0.3
10
—
—
—
—
—
- 7
1
1
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
pF
pF
%