MD7P19130H Freescale Semiconductor, Inc, MD7P19130H Datasheet

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MD7P19130H

Manufacturer Part Number
MD7P19130H
Description
Rf Power Field Effect Transistors N-channel Enhancement -mode Lateral Mosfets
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for CDMA base station applications with frequencies from 1930 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
I
Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Output Power
Operation
DQ
out
Power Gain — 20 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
= 1250 mA, P
@ 1 dB Compression Point w 130 Watts CW
out
= 40 Watts Avg., Full Frequency Band, 3GPP Test
(1,2)
Rating
DD
= 28 Volts,
Symbol
V
V
V
T
T
DSS
T
GS
DD
stg
RF
C
RF
J
CASE 465M - 01, STYLE 1
CASE 465H - 02, STYLE 1
Document Number: MD7P19130H
1930 - 1990 MHz, 40 W AVG., 28 V
inA
inB
MD7P19130HSR3
MD7P19130HSR3
/V
/V
MD7P19130HR3 MD7P19130HSR3
MD7P19130HR3
MD7P19130HR3
Figure 1. Pin Connections
GSA
GSB
LATERAL N - CHANNEL
NI - 780S - 4
RF POWER MOSFETs
NI - 780 - 4
SINGLE W - CDMA
3
4
- 65 to +150
- 0.5, +65
- 6.0, +10
(Top View)
32, +0
Value
150
225
Rev. 1, 12/2008
1
2 RF
RF
outA
outB
Unit
Vdc
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

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MD7P19130H Summary of contents

Page 1

... Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MD7P19130H MD7P19130HSR3 = 28 Volts, 1930 - 1990 MHz AVG CASE 465M - 01, STYLE 1 ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Measurement made with device in single - ended configuration. 4. Part internally matched both on input and output. MD7P19130HR3 MD7P19130HSR3 2 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... Delay = 130 W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 1250 mA, 1930 - 1990 MHz Bandwidth — 130 — — 0.3 — — 0.5 — — 2.3 — — 80 — — 0.016 — — 0.01 — MD7P19130HR3 MD7P19130HSR3 Unit W dB ° ns ° dB/°C dBm/°C 3 ...

Page 4

... Z12 0.078″ x 0.814″ Microstrip Z13 0.134″ x 0.957″ Microstrip Z14 0.150″ x 0.276″ Microstrip Figure 2. MD7P19130HR3(HSR3) Test Circuit Schematic Table 5. MD7P19130HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short Ferrite Bead C1 47 μ Electrolytic Capacitor C2 100 μ Electrolitic Capacitor C3 1.0 μ ...

Page 5

... MD7P19130H/HS Rev. 2 Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C6 B1 Single−ended Quadrature combined Doherty Push−pull Possible Circuit Topologies Figure 4. C10 C7 C12 C11 C8 C9 ...

Page 6

... Figure 6. CW Power Gain versus Output Power 20 19.5 −1 19 −2 18.5 −3 18 −4 17.5 −5 20 MD7P19130HR3 MD7P19130HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.) DD out I = 1250 mA, Single−Carrier W−CDMA DQ 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 0.01% Probability (CCDF) PARC IRL 1900 1920 ...

Page 7

... Figure 10. MTTF versus Junction Temperature 60 0 25°C −10 50 85°C 40 −20 30 −30 −40°C 20 −40 25°C 10 −50 0 −60 100 200 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 30%. DD out D MD7P19130HR3 MD7P19130HSR3 230 250 7 ...

Page 8

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 11. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MD7P19130HR3 MD7P19130HSR3 CDMA TEST SIGNAL −10 −20 −30 −40 Input Signal −50 −60 −70 − ...

Page 9

... MHz W 1880 7.37 + j1.00 1.84 - j3.56 1900 7.33 + j0.96 1.78 - j3.37 1920 7.27 + j0.93 1.72 - j3.17 1940 7.19 + j0.90 1.64 - j2.98 1960 7.07 + j0.89 1.55 - j2.79 1980 6.93 + j0.97 1.48 - j2.55 2000 6.89 + j1.04 1.46 - j2.36 2020 6.83 + j1.07 1.44 - j2.20 2040 6.75 + j1.12 1.40 - j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load load W Output Matching Network MD7P19130HR3 MD7P19130HSR3 9 ...

Page 10

... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MD7P19130HR3 MD7P19130HSR3 10 Ideal P3dB = 53.48 dBm (223 W) P1dB = 52.67 dBm (185 Vdc 1250 mA, Pulsed μsec(on), 10% Duty Cycle 1960 MHz ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MD7P19130HR3 MD7P19130HSR3 11 ...

Page 12

... MD7P19130HR3 MD7P19130HSR3 12 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MD7P19130HR3 MD7P19130HSR3 13 ...

Page 14

... MD7P19130HR3 MD7P19130HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

... The following table summarizes revisions to this document. Revision Date 0 May 2008 • Initial Release of Data Sheet 1 Dec. 2008 • Corrected the pin order in Fig. 1, Pin Connections, to match the Mechanical Outline pin order Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MD7P19130HR3 MD7P19130HSR3 15 ...

Page 16

... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MD7P19130HR3 MD7P19130HSR3 Document Number: MD7P19130H Rev. 1, 12/2008 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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