isl706xrheval1z Intersil Corporation, isl706xrheval1z Datasheet - Page 13

• Manufacturer Part Number: isl706xrheval1z
• Description: Rad-hard, 5.0v/3.3v µ-processor Supervisory Circuits
• Manufacturer: Intersil Corporation

Weight Characteristics
Weight of Packaged Device
Die Characteristics
Die Dimensions
Interface Materials
Metallization Mask Layout
GLASSIVATION
TOP METALLIZATION
TOP METALLIZATION
0.31 Grams typical
2030µm x 2030µm (79.9 mils x 79.9 mils)
Thickness: 483µm ± 25.4µm (19.0 mils ± 1 mil)
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
Type: Silicon
ISL705ARH, ISL705BRH, ISL705CRH, ISL706ARH, ISL706BRH, ISL706CRH
VDD
GND
13
PFI
MR
ASSEMBLY RELATED INFORMATION
ADDITIONAL INFORMATION
Layout Characteristics
Step and Repeat
Substrate Potential
Worst Case Current Density
Transistor Count
2030µm x 2030µm
BACKSIDE FINISH
PROCESS
Silicon
0.6µM BiCMOS Junction Isolated
Unbiased
< 2 x 10
1400
PFO
5
A/cm
2
WDO
RST, RST, RST_OD
WDI
December 1, 2011
FN7662.1