t2035h-600 STMicroelectronics, t2035h-600 Datasheet - Page 4

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t2035h-600

Manufacturer Part Number
t2035h-600
Description
Snubberless High Temperature 20 A Triacs
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
4/10
Figure 3.
Figure 5.
Figure 7.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10000
10
1000
1
100
0.0
0
0.01
dI/dt limitation: 50A/µs
25
On-state characteristics
(maximum values)
0.5
Non repetitive surge peak on-state
current (sinusoidal pulse width
tp<10 ms) and value of I²t
RMS on-state current vs ambient
temperature (epoxy printed
circuit board FR4 e
T
j
=150°C
50
1.0
0.10
T
t
amb
P
(ms)
75
T
1.5
(°C)
V
j
=25°C
TM
(V)
100
1.00
2.0
cu
= 35 µm)
I
I²t
TSM
V
R
Tj initial=25°C
T0
T
D
125
j
= 21 mW
2.5
= 0.80 V
max. :
S
CU
=180°
=1cm²
10.00
150
3.0
Figure 4.
Figure 6.
Figure 8.
1.E+00
220
200
180
160
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
1.E-01
1.E-02
1.E-03
80
60
40
20
0
-40
1
1.E-03
I
H
-20
& I
L
I
GT
Surge peak on-state current vs
number of cycles
Relative variation of gate trigger
current, holding current and
latching current vs junction
temperature (typical values)
1.E-02
Relative variation of thermal
impedance vs pulse duration
Z
Repetitive
T
th(j-c)
c
0
=127°C
Non repetitive
T
j
20
initial=25°C
1.E-01
10
Z
Number of cycles
th(j-a)
40
T
j
(°C)
1.E+00
t
60
P
(s)
80
1.E+01
100
100
T2035H Series
120
1.E+02
t=20ms
One cycle
140
1.E+03
1000
160

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