tc1501p1721 Transcom, Inc., tc1501p1721 Datasheet - Page 2

• Manufacturer Part Number: tc1501p1721
• Description: 1w High Linearity And High Efficiency Gaas Power Fets
• Manufacturer: Transcom, Inc.

ABSOLUTE MAXIMUM RATINGS (T
CHIP DIMENSIONS
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 C
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220 C to 250 C; Bond Tip Temperature: 150 C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
Web-Site:
Symbol
T
V
V
T
I
P
P
STG
DS
CH
DS
GS
in
T
www.transcominc.com.tw
Continuous Dissipation
Drain-Source Voltage
Channel Temperature
RF Input Power, CW
Gate-Source Voltage
Storage Temperature
90 Dasoong 7
Drain Current
Parameter
D
G
600 ± ± ± ± 12
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
D
G
- 65
28 dBm
C
Rating
175
Phone: [phone]
3.8 W
12 V
-5 V
I
to +175
DSS
A
=25 C)
C
470 ± ± ± ± 12
C
2 / 5
Fax: [phone]
5 C; Handling Tool: Tweezers;
Drain Pad: 86.0 x 76.0
Units: Micrometers
Gate Pad: 79 x 59.5
Chip Thickness: 50
REV5_20070502
TC1501