TC2997C Transcom, Inc., TC2997C Datasheet
TC2997C
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TC2997C Summary of contents
Page 1
... Flange Ceramic Package DESCRIPTION The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. ...
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... I DSS 37 dBm testing. The static discharge must be less than 300V. 100 W 175 +175 C C Gate Drain Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2997C PRE3_20050418 Source Fax: 886-6-5051602 ...
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... Murata 0.75 pF 0603 Murata 2.0 pF 0603 Murata 1000 pF 0603 Murata 0.1 uF 0603 Murata 10 uF 1206 Murata 2.2 pF 0805 ATC 1.5 pF 0805 ATC 1000 pF 0603 Murata Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2997C PRE3_20050418 Fax: 886-6-5051602 ...