irf6662 International Rectifier Corp., irf6662 Datasheet - Page 2

• Manufacturer Part Number: irf6662
• Description: Directfet? Power Mosfet
• Manufacturer: International Rectifier Corp.

Notes:
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
IRF6662
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
Q
Q
Q
Q
sw
oss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
+ Q
gd
)
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
11
Typ.
1360
1340
Typ.
0.10
17.5
–––
-9.7
–––
–––
–––
270
160
–––
–––
–––
–––
–––
–––
4.9
1.2
6.8
9.1
8.0
1.2
7.5
5.9
22
11
11
24
61
34
50
Max.
Max.
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
2.5
1.3
22
20
31
10
66
51
75
mV/°C
Units
Units
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 17
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 4.9A
= 4.9A
= 25°C, I
= 25°C, I
=6.2Ω
= V
= 100V, V
= 80V, V
= 10V, I
= 50V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V, V
= 0V
= 0V, V
= 0V, V
GS
, I
Conditions
Conditions
D
D
DS
DS
S
F
D
D
= 250µA
GS
GS
GS
= 4.9A, V
= 4.9A, V
= 100µA
= 4.9A
= 8.2A
GS
= 1.0V, f=1.0MHz
= 80V, f=1.0MHz
= 0V, T
= 0V
= 10V
= 0V
www.irf.com
D
G
= 1mA
GS
DD
J
= 125°C
= 50V
= 0V
D
S