irf630m STMicroelectronics, irf630m Datasheet

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irf630m

Manufacturer Part Number
irf630m
Description
N-channel 200v - 0.35w - 9a To-220/to-220fp Mesh Overlay Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Order codes
General features
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources. Isolated TO-
220 option simplifies assembly and cuts risk of
accidental short circuit in crowded monitor PCB’s.
Applications
June 2006
IRF630MFP
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
Switching application
IRF630M
Type
Part number
IRF630MFP
IRF630M
(@Tjmax)
200 V
200 V
V
DSS
N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP
< 0.40 Ω
< 0.40 Ω
R
DS(on)
IRF630MFP
IRF630M
Marking
9 A
9 A
I
D
Rev 2
Mesh Overlay™ Power MOSFET
Internal schematic diagram
TO-220FP
Package
TO-220
TO-220
1
2
3
IRF630MFP
TO-220FP
IRF630M
Packaging
Tube
Tube
1
2
www.st.com
3
1/14
14

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irf630m Summary of contents

Page 1

... Switching application Order codes Part number IRF630M IRF630MFP June 2006 Mesh Overlay™ Power MOSFET R I DS(on) D < 0.40 Ω < 0.40 Ω Internal schematic diagram Marking IRF630M IRF630MFP Rev 2 IRF630M IRF630MFP TO-220FP TO-220 Package Packaging TO-220 Tube TO-220FP Tube 1/14 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ IRF630M - IRF630MFP ...

Page 3

... IRF630M - IRF630MFP 1 Electrical ratings Table 1. Absolute maximum rating Symbol V Drain-source Voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope ...

Page 4

... D Parameter Test conditions V > D(on 4. 25V MHz 100V 4.7Ω 160V 10V GS IRF630M - IRF630MFP Min. Typ. Max 200 GS ±100 = 250µ 4.5A 0.35 Min. Typ. Max. DS(on)max 540 4. 10V 9A ...

Page 5

... IRF630M - IRF630MFP Table 6. Sourse drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics 6/14 IRF630M - IRF630MFP Figure 2. Thermal impedance for TO-220 Figure 4. Thermal impedance for TO-220FP Figure 6. Transfer characteristics ...

Page 7

... IRF630M - IRF630MFP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/14 IRF630M - IRF630MFP ...

Page 9

... IRF630M - IRF630MFP 3 Test circuit Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive waveform Figure 17. Gate charge test circuit Test circuit 9/14 ...

Page 10

... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/14 IRF630M - IRF630MFP www.st.com ...

Page 11

... IRF630M - IRF630MFP DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Package mechanical data inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 ...

Page 12

... TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 1.5 1.15 1.5 4.95 5.2 2.4 2.7 10 10.4 16 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9 9.3 3 3.2 IRF630M - IRF630MFP inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 0.094 0.106 0.393 0.409 0.630 1.126 1.204 .0385 0.417 0.114 0.141 0.626 0.645 0.354 0.366 ...

Page 13

... IRF630M - IRF630MFP 5 Revision history Table 7. Revision history Date 21-Jun-2004 28-Jun-2006 Revision 1 Preliminary version 2 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF630M - IRF630MFP ...

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