2sk3437 TOSHIBA Semiconductor CORPORATION, 2sk3437 Datasheet - Page 2

• Manufacturer Part Number: 2sk3437
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K3437
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
GSS
Q
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
V
I
V
I
V
V
V
V
V
Duty < = 1%, t
G
D
V
GS
DS
DS
GS
DS
DS
DD
GS
= ±10 μA, V
= 10 mA, V
10 V
I
I
dI
DR
DR
= 600 V, V
= 10 V, I
= 15 V, I
= 25 V, V
0 V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
DR
2
= 10 A, V
= 10 A, V
(Ta = 25°C)
/dt = 100 A/μs
Test Condition
w
D
D
D
GS
GS
DS
Test Condition
= 10 μs
GS
= 1 mA
= 5 A
DS
= 5 A
GS
= 0 V
GS
GS
= 0 V, f = 1 MHz
= 0 V
I
= 0 V
= 0 V
D
= 10 V, I
⎯
⎯
= 0 V
= 0 V,
= 5 A
V
DD
D
R
∼ − 300 V
= 10 A
L
V
= 60 Ω
OUT
600
Min
±30
Min
3.0
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1200
1600
Typ.
0.74
Typ.
130
4.5
10
13
40
50
28
16
12
17
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
2006-11-08
2SK3437
−1.7
Max
Max
±10
100
5.0
1.0
⎯
⎯
⎯
⎯
⎯
10
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V