2sk3440 TOSHIBA Semiconductor CORPORATION, 2sk3440 Datasheet - Page 4
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2sk3440
Manufacturer Part Number
2sk3440
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK3440.pdf
(6 pages)
10000
1000
100
200
160
120
14
12
10
10
80
40
10
−80
8
6
4
2
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Common source
V GS = 10 V
Pulse test
−40
40
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
1
R
DS (ON)
80
P
D
40
– Tc
– Tc
120
10
80
DS
DS
I D = 50 A
(V)
160
120
12
C oss
C rss
C iss
25
160
100
200
4
1000
100
100
0.1
10
80
60
40
20
−80
1
6
5
4
3
2
1
0
0
0
0
10
Common source
Tc = 25°C
Pulse test
Common source
I D = 50 A
Tc = 25°C
Pulse test
V DS
Dynamic input/output characteristics
−0.2
−40
20
Drain-source voltage V
Total gate charge Q
Case temperature Tc (°C)
−0.4
V GS
3
40
0
V DS = 12 V
I
1
−0.6
DR
V
th
– V
40
60
V GS = 0 V
– Tc
−0.8
DS
24
g
80
80
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−1
(nC)
48
(V)
120
100
−1.2
2006-11-17
2SK3440
−1.4
160
120
20
16
12
8
4
0