2sk3440 TOSHIBA Semiconductor CORPORATION, 2sk3440 Datasheet

2sk3440

Manufacturer Part Number

2sk3440

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.2SK3440.pdf (6 pages)

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Switching Regulator, DC-DC Converter Applications

Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

= 50 V, T

Characteristics

Pulse (Note 1)

= 20 kΩ)

DSS

= 25°C (initial), L = 350 μH, R

= 2.0 to 4.0 V (V

(Note 2)

(Note 1)

= 100 μA (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 30 S (typ.)

stg

2SK3440

= 60 V)

= 6.5 mΩ (typ.)

Symbol

= 10 V, I

th (ch-c)

−55 to 150

Rating

12.5

±30

200

125

644

150

= 1 mA)

= 25 Ω, I

Max

1.00

°C/W

Unit

°C

= 50 A

Notice:

Please use the S1 pin for gate input

signal return. Make sure that the

main current flows into the S2 pin.

Weight: 0.74 g (typ.)

JEDEC

JEITA

TOSHIBA

2-9F1B

SC-97

2006-11-17

―

2SK3440

Unit: mm

Related parts for 2sk3440

2sk3440 Summary of contents

Page 1

... T °C stg Symbol Max Unit R 1.00 °C/W th (ch- Ω 2SK3440 Unit: mm JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin ...

Page 2

... DR ⎯ DRP = DS2F /dt = 100 A/μ 2SK3440 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ ⎯ 60 ⎯ 2.0 4.0 ⎯ 6.5 ⎯ ⎯ ⎯ 3700 = MHz ⎯ ...

Page 3

... Drain-source voltage V 1.2 1 0.8 0.6 0.4 0 Gate-source voltage V 100 Common source Tc = 25°C 25°C Pulse test 100° 100 3 2SK3440 I – Common source 25°C, Pulse test 8.5 8 7 – Common source Tc = 25°C ...

Page 4

... Dynamic input/output characteristics 100 Common source 25°C 80 Pulse test 200 4 2SK3440 I – −0.4 −0.6 −0.8 −1 −1.2 −1.4 ( – Common source ...

Page 5

... Pulse width t (s) w 1000 800 600 400 200 Channel temperature (initial) T 100 Test circuit = 25 Ω 350 μ 2SK3440 – 100 125 150 (° VDSS Waveform ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3440 20070701-EN 2006-11-17 ...

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