2sk3302 TOSHIBA Semiconductor CORPORATION, 2sk3302 Datasheet - Page 3

• Manufacturer Part Number: 2sk3302
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.5
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
0.5
0.3
0.1
0.05
0
0
1
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
2
2
0.1
Drain current I
Ta = −55°C
4
100
4
I
I
|Y
D
D
fs
– V
– V
| – I
25
25
Ta = −55°C
10
DS
GS
V GS = 3.75 V
D
0.3
6
6
D
8
100
(A)
6
5.5
Common source
V DS = 20 V
Pulse test
0.5
8
8
4.75
4.25
4.5
5
4
10
10
1
3
1.0
0.8
0.6
0.4
0.2
20
16
12
30
10
0.01
0
8
4
0
5
3
1
0
0
Common source
Ta = 25°C
Pulse test
10
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
4
0.03 0.05
10
Drain current I
R
20
V
DS (ON)
8
I
DS
D
6
5.75
– V
0.1
– V
5.5
8
DS
GS
– I
30
12
D
5.25
D
Common source
Ta = 25°C
Pulse test
(A)
Common source
Ta = 25°C
Pulse test
I D = 0.5 A
0.3
5
4.75
0.25
0.12
V GS = 4 V
40
16
0.5
4.5
4.25
2006-11-06
2SK3302
50
20
1