2sk3309 TOSHIBA Semiconductor CORPORATION, 2sk3309 Datasheet - Page 5

• Manufacturer Part Number: 2sk3309
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
100
0.1
10
1
1
I D max
(continuous)
I D max (pulse) *
* Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Tc = 25°C
Drain-source voltage V
0.001
0.01
DC operation
0.1
Tc = 25°C
10
Safe operating area
10 μ
1
10
0.02
0.05
0.01
0.2
0.1
Duty = 0.5
1 ms *
100 μ
100
DS
V DSS max
Single pulse
100 μs *
(V)
1 m
1000
Pulse width t
r
th
10 m
– t
5
w
w
R
V
DD
G
(S)
= 25 Ω
= 90 V, L = 3.7 mH
400
300
200
100
−15 V
100 m
0
25
15 V
Test circuit
Channel temperature (initial) T
P DM
50
Duty = t/T
R th (ch-c) = 1.92°C/W
1
t
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
10
Wave form
2
1
VDSS
I
⋅
AR
L
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
2006-11-06
B VDSS
2SK3309
150
−
V DD
⎞
⎟
⎟
⎠