2sk3309 TOSHIBA Semiconductor CORPORATION, 2sk3309 Datasheet - Page 3

• Manufacturer Part Number: 2sk3309
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 20 V
Pulse test
2
Drain-source voltage V
2
Gate-source voltage V
Drain current I
4
1
Tc = −55°C
4
⎪Y
I
I
15
D
D
100
fs
25
– V
– V
⎪ – I
6
DS
10
GS
D
6
D
10
100
8
GS
DS
(A)
8.5
Tc = −55°C
V GS = 6 V
25
(V)
(V)
8
10
7.5
8
7
100
10
12
3
0.1
10
20
16
12
10
1
8
4
0
8
6
4
2
0
1
0
0
Common source
Tc = 25°C
Pulse test
15
10
Drain-source voltage V
4
Gate-source voltage V
V GS = 10, 15 V
Drain current I
10
R
20
V
DS (ON)
8
I
DS
D
– V
10
– V
DS
9
GS
– I
30
12
D
D
8.5
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
8
(V)
(V)
V GS = 6 V
I D = 10 A
40
16
7.5
2.5
7
2006-11-06
5
2SK3309
100
50
20