2sk3700 TOSHIBA Semiconductor CORPORATION, 2sk3700 Datasheet - Page 2

• Manufacturer Part Number: 2sk3700
• Description: Silicon N Channel Mos Type Switching Regulator Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
TOSHIBA
K3700
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
G
GS
DS
DS
GS
DS
DS
GS
DD
= 10mA, V
= ±10μA, V
10 V
0 V
I
I
dI
≒400 V, V
DR
DR
= 720 V, V
= 10 V, I
= 20 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
DR
2
= 5 A, V
= 5 A, V
(Ta = 25°C)
/dt = 100 A/μs
w
Test Condition
GS
D
D
D
= 10 μs
GS
Test Condition
DS
GS
= 1 mA
= 3 A
GS
DS
= 3 A
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 0V
= 10 V, I
= 0 V
= 0 V
= 0 V
= 0 V,
I
⎯
⎯
D
= 3 A
V
DD
D
R
≒400 V
= 5 A
L
= 133 Ω
V
OUT
±30
900
Min
Min
2.0
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1150
Typ.
Typ.
100
170
900
2.0
4.5
5.4
⎯
―
⎯
⎯
⎯
20
30
70
60
28
17
11
⎯
⎯
⎯
2006-11-13
2SK3700
Max
−1.7
Max
±10
100
4.0
2.5
15
―
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Unit
Unit
μC
μA
μA
nC
pF
ns
ns
V
V
V
Ω
S
A
A
V