2sk1316l Renesas Electronics Corporation., 2sk1316l Datasheet - Page 4

• Manufacturer Part Number: 2sk1316l
• Description: Silicon N Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SK1316(L), 2SK1316(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
5,000
2,000
1,000
500
200
100
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
50
0
–40
0
0.2
di/dt = 100 A/ s, Ta = 25 C
V
Pulse Test
Static Drain to Source on State
V
Pulse Test
Reverse Drain Current I
V
GS
Dynamic Input Characteristics
Resistance vs. Temperature
GS
Case Temperature T
Body to Drain Diode Reverse
DD
V
0.5
= 0
DS
= 10 V
20
0
= 100 V
Gate Charge Qg (nc)
250 V
400 V
V
250 V
100 V
DD
Recovery Time
1.0
= 400 V
40
40
I
D
= 10 A
2
V
80
GS
60
5
C
120
2, 5 A
DR
I
( C)
D
80
= 8 A
10
(A)
160
100
20
20
16
12
8
4
0
10,000
1,000
500
200
100
100
1.0
0.5
50
20
10
50
20
10
10
5
5
2
0.2
0.1
0
V
PW = 2 s, duty < 1%
Drain to Source Voltage V
V
Pulse Test
GS
DS
Forward Transfer Admittance
0.2
= 10 V, V
Switching Characteristics
= 20 V
0.5
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current I
Drain Current I
t
vs. Drain Current
r
0.5
1.0
DD
t
t
20
f
d (off)
= 30 V
•
•
1.0
T
2
C
t
d (on)
= 25 C
Ciss
Coss
Crss
–25 C
30
75 C
2
D
D
5
(A)
(A)
V
f = 1 MHz
GS
40
DS
10
5
= 0
(V)
10
50
20