2sk1316l Renesas Electronics Corporation., 2sk1316l Datasheet - Page 3

• Manufacturer Part Number: 2sk1316l
• Description: Silicon N Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SK1316(L), 2SK1316(S)
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 7
80
60
40
20
20
16
12
10
0
8
4
0
8
6
4
2
0
Drain to Source Saturation Voltage
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature T
vs. Gate to Source Voltage
10 V
10
4
50
20
6 V
8
V
100
GS
5.5 V
5.0 V
4.5 V
= 4 V
30
I
12
D
10 A
= 2 A
5 A
Pulse Test
Pulse Test
150
C
40
16
GS
( C)
DS
(V)
(V)
200
50
20
0.05
1.0
0.5
0.2
0.1
1.0
0.5
0.2
0.1
10
50
20
10
20
16
12
5
2
5
2
8
4
0
0.5
1
Drain to Source Voltage V
Ta = 25 C
Gate to Source Voltage V
Typical Transfer Characteristics
Maximum Safe Operation Area
Static Drain to Source on State
V
Pulse Test
Operation in this Area
is Limited by R
Resistance vs. Drain Current
Pulse Test
DS
1.0
3
= 20 V
2
Drain Current I
2
–25 C
10
DS (on)
4
30
5
6
10
100
D
V
Ta = 25 C
GS
(A)
= 10 V
DS
GS
20
300
8
75 C
15 V
(V)
(V)
1,000
10
50