si4431cdy Vishay, si4431cdy Datasheet - Page 4

• Manufacturer Part Number: si4431cdy
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4431CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.1
1.9
1.7
1.5
1.3
1.1
0.1
10
- 50
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
- 25
Source-Drain Diode Forward Voltage
V
SD
0
T
Threshold Voltage
- Source-to-Drain Voltage (V)
J
T
= 150 °C
J
25
- Temperature (°C)
50
I
D
= 250 µA
75
0.01
100
0.1
10
100
1
0.1
T
J
= 25 °C
* V
Single Pulse
T
125
A
GS
= 25 °C
> minimum V
New Product
Limited by R
V
150
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS
Limited
0.05
0.04
0.03
0.02
0.01
0.00
10
DS(on)
50
40
30
20
10
0.001
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
1 ms
10 ms
1 s
10 s
DC
0.01
4
V
100
GS
- Gate-to-Source Voltage (V)
0.1
8
Time (s)
S-81546-Rev. A, 07-Jul-08
Document Number: 68748
12
1
T
T
I
D
J
J
16
10
= 125 °C
= 25 °C
= 7 A
100
20