si4431cdy Vishay, si4431cdy Datasheet - Page 3

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si4431cdy

Manufacturer Part Number
si4431cdy
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68748
S-81546-Rev. A, 07-Jul-08
0.06
0.05
0.04
0.03
0.02
0.01
30
25
20
15
10
10
0
5
0
8
6
4
2
0
0
0
0
I
D
On-Resistance vs. Drain Current
= 7 A
4
5
1
V
DS
Output Characteristics
V
V
V
Q
GS
GS
GS
g
- Drain-to-Source Voltage (V)
I
10
- Total Gate Charge (nC)
D
8
= 10 thru 4 V
= 10 V
= 4.5 V
Gate Charge
- Drain Current (A)
2
V
DS
12
15
= 15 V
3
V
DS
16
20
= 24 V
V
V
GS
GS
= 3 V
= 1 V, 2 V
4
20
25
New Product
24
30
5
1800
1500
1200
900
600
300
4.0
3.2
2.4
1.6
0.8
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
0.5
6
V
V
Transfer Characteristics
DS
GS
T
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
V
25
GS
Capacitance
12
= - 10 V, I
1.5
C
50
T
iss
Vishay Siliconix
C
V
= 125 °C
T
Si4431CDY
GS
18
C
D
T
75
= 25 °C
C
= - 5.6 A
= - 4.5 V, I
2.0
= - 55 °C
www.vishay.com
100
24
2.5
D
125
= - 7 A
150
3.0
30
3

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