si4922bdy Vishay, si4922bdy Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
si4922bdy
Manufacturer Part Number
si4922bdy
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI4922BDY.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
si4922bdy-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
33 013
Company:
Part Number:
si4922bdy-T1-E3
Manufacturer:
VISHAY
Quantity:
12 958
Part Number:
si4922bdy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4922bdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74459
S-70237–Rev. A, 05-Feb-07
0.030
0.026
0.018
0.014
0.010
0.022
40
32
24
16
10
8
0
8
6
4
2
0
0.0
0
On-Resistance vs. Drain Current and Gate Voltage
0
I
D
= 5 A
0.5
8
9
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
V
- Total Gate Charge (nC)
V
I
GS
Gate Charge
D
DS
GS
- Drain Current (A)
1.0
16
18
= 10 thru 3 V
= 10 V
= 2.5 V
V
V
V
DS
GS
GS
= 20 V
1.5
24
27
= 4.5 V
= 10 V
V
DS
2.0
32
= 15 V
36
2 V
New Product
2.5
40
45
3000
2400
1800
1200
600
2.0
1.6
1.2
0.8
0.4
0.0
1.7
1.5
1.3
1.1
0.9
0.7
0
0.0
- 50
0
C
rss
On-Resistance vs. Junction Temperature
I
D
- 25
= 5 A
C
0.6
C
6
T
iss
T
V
oss
V
J
Transfer Characteristics
J
GS
T
DS
= 25 °C
0
= 125 °C
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
V
25
1.2
12
GS
= 4.5 V
50
Vishay Siliconix
1.8
18
T
Si4922BDY
75
J
= - 55 °C
V
GS
100
= 10 V
www.vishay.com
2.4
24
125
3.0
30
150
3