si4686dy Vishay, si4686dy Datasheet - Page 2

• Manufacturer Part Number: si4686dy
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Si4686DY
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a
J
a
a
= 25_C UNLESS OTHERWISE NOTED)
DV
Symbol
DV
V
r
r
GS(th)
I
DS(on)
DS(on)
t
t
t
t
I
I
I
C
V
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DSS
I
g
Q
Q
R
Q
SM
DS
I
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
a
b
fs
gs
gd
r
r
f
f
g
g
g
rr
/T
/T
J
J
New Product
I
I
V
F
F
V
I
V
I
DS
D
V
D
= 2 6 A di/dt = 100 A/ms T
= 2.6 A, di/dt = 100 A/ms, T
DS
DS
DS
^ 10 A, V
^ 10 A, V
= 15 V, V
= 15 V, V
V
= 30 V, V
V
V
V
= 15 V, V
V
V
V
V
V
V
V
V
DS
GS
GS
DS
DS
DS
Test Condition
DD
DD
DD
DD
GS
DS
= 0 V, V
= 10 V, I
= 4.5 V, I
= 15 V, I
= V
w 5 V, V
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
= 0 V, I
= 30 V, V
I
I
T
f = 1 MHz
D
D
I
GEN
GEN
S
C
GS
GS
GS
= 250 mA
= 250 mA
GS
GS
= 2.6 A
= 25_C
, I
= 10 V, I
= 5 V, I
= 4.5 V, R
GS
= 0 V, T
D
= 0 V, f = 1 MHz
= 10 V, R
D
D
GS
D
D
= 250 mA
GS
L
L
L
L
= 250 mA
= "20 V
= 13.8 A
= 13.8 A
= 11.4 A
= 1.5 W
= 1.5 W
= 1.5 W
= 1.5 W
= 10 V
= 0 V
D
D
J
= 13.8 A
= 55_C
= 13.8 A
g
g
J
J
= 1 W
= 1 W
= 25_C
= 25_C
Min
30
50
1
0.0078
0.011
1220
Typ
31.3
12.5
12.5
230
9.2
4.1
2.8
0.8
0.8
S-51169—Rev. A, 20-Jun-05
−6
56
98
17
20
20
20
13
16
23
25
15
8
8
Document Number: 73422
0.0095
"100
Max
0.014
1.2
4.3
1.2
10
26
14
30
30
30
15
20
25
35
15
50
50
30
3
1
mV/_C
mV/_C
Unit
nC
nC
nC
nA
mA
mA
pF
ns
ns
ns
ns
ns
W
W
W
V
V
A
S
A
A
V