si4686dy Vishay, si4686dy Datasheet

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si4686dy

Manufacturer Part Number
si4686dy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a.
b.
c.
d.
Document Number: 73422
S-51169—Rev. A, 20-Jun-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Based on T
Surface mounted on 1” x 1” FR4 board.
t = 10 sec
Maximum under steady state conditions is 80 _C/W.
DS
30
30
(V)
Ordering Information: Si4686DY-T1—E3 (Lead (Pb)-Free)
C
= 25_C.
0.0095 @ V
0.014 @ V
r
G
S
S
S
DS(on)
J
J
= 150_C)
= 150_C)
GS
b, d
1
2
3
4
GS
Parameter
Parameter
(W)
= 4.5 V
= 10 V
Top View
SO-8
N-Channel 30-V (D-S) MOSFET
I
D
18.2
(A)
15
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Q
T
T
T
T
T
t p 10 sec
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
9 2 nC
9.2 nC
g
New Product
= 25_C
= 70_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 70_C
(Typ)
Symbol
Symbol
FEATURES
D Extremely Low Q
D TrenchFETr Power MOSFET
D 100% R
APPLICATIONS
D High-Side DC/DC Conversion
T
R
R
J
V
V
I
P
P
, T
I
I
DM
thJA
thJF
I
I
Low Switching Losses
GS
DS
D
D
S
S
− Notebook
− Server
D
D
stg
g
Tested
Typical
G
35
20
gd
N-Channel MOSFET
WFETr Technology for
−55 to 150
13.8
Limit
2.5
3.0
1.9
11
"20
18.2
14.5
4.3
5.2
3.3
30
50
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
Vishay Siliconix
42
24
Si4686DY
www.vishay.com
Unit
_C/W
_C/W
Unit
_C
_C
W
W
RoHS
COMPLIANT
V
V
A
1

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si4686dy Summary of contents

Page 1

... Top View Ordering Information: Si4686DY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current ...

Page 2

... Si4686DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance ...

Page 3

... − Total Gate Charge (nC) g Document Number: 73422 S-51169—Rev. A, 20-Jun-05 New Product 3 V 1.6 2 Si4686DY Vishay Siliconix Transfer Characteristics 125_C C 2 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) GS Capacitance 1500 C ...

Page 4

... Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.00 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 2.6 2.4 2.2 2 250 mA D 1.8 1.6 1.4 1.2 1.0 −50 − − Temperature (_C) J *Limited by r www.vishay.com 4 New Product T = 25_C J 0.8 1.0 1.2 100 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73422 S-51169—Rev. A, 20-Jun-05 New Product 125 150 25 Si4686DY Vishay Siliconix Power De-Rating 50 75 100 125 150 T − Case Temperature (_C) C www.vishay.com 5 ...

Page 6

... Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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