fs14sm-16 Mitsumi Electronics, Corp., fs14sm-16 Datasheet - Page 2

• Manufacturer Part Number: fs14sm-16
• Description: Mitsubishi Nch Power Mosfet
• Manufacturer: Mitsumi Electronics, Corp.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
300
250
200
150
100
50
50
40
30
20
10
POWER DISSIPATION DERATING CURVE
0
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
P
10
D
50
= 275W
(TYPICAL)
20
V
100
GS
(Tch = 25°C)
= 20V
30
10V
I
I
V
V
I
I
I
I
V
V
R
I
Channel to case
D
GS
D
D
D
D
S
GS
DS
DS
DD
GEN
= 7A, V
= 1mA, V
= 1mA, V
= 7A, V
= 7A, V
= 7A, V
= ±100 A, V
150
= 800V, V
= 25V, V
= ±25V, V
= 200V, I
T
Pulse Test
= R
C
C
40
= 25°C
(°C)
DS
GS
GS
GS
DS
GS
5V
4V
GS
DS
(V)
GS
= 10V
= 10V
= 10V
= 50
= 0V
D
DS
GS
200
= 0V
= 10V
50
= 7A, V
= 0V, f = 1MHz
DS
= 0V
= 0V
= 0V
Test conditions
GS
= 10V,
10
10
10
20
16
12
–1
7
5
3
2
7
5
3
2
7
5
3
2
7
8
4
0
1
0
3 5 7
0
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
T
Pulse Test
C
= 25°C
OUTPUT CHARACTERISTICS
10
T
Single Pulse
MITSUBISHI Nch POWER MOSFET
C
4
1
= 25°C
2
HIGH-SPEED SWITCHING USE
3 5 7
V
(TYPICAL)
GS
8
Min.
= 20V
800
±30
—
—
—
—
—
—
—
—
—
—
—
—
—
10
2
9
10V
2
12
2
3 5 7
FS14SM-16A
Limits
2900
0.52
3.64
Typ.
290
325
100
1.0
15
50
45
65
—
—
—
—
—
P
5V
3
D
16
= 275W
10
DS
DS
4.5V
100ms
1ms
10ms
100ms
DC
4V
3
(V)
(V)
2
Max.
0.70
4.90
0.45
±10
1.5
20
—
—
—
—
—
—
—
—
—
—
1
4
3
Feb.1999
°C/W
Unit
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A