sum60n04-05lt Vishay, sum60n04-05lt Datasheet - Page 2

• Manufacturer Part Number: sum60n04-05lt
• Description: N-channel 40-v D-s Mosfet With Sensing Diode
• Manufacturer: Vishay

SUM60N04-05LT
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
a
V
V
I
Symbol
RM(REC)
V
J
r
FD1
(BR)DSS
I
DS(on)
V
t
t
I
C
I
C
V
GS(th)
D(on)
ΔV
C
Q
Q
d(on)
d(off)
GSS
DSS
I
= 25 °C, unless otherwise noted
Q
Q
g
SM
FD2
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
rr
g
F
and
C
= 25 °C
V
V
I
V
V
V
D
V
DS
DS
GS
GS
DS
GS
From I
≅ 25 A, V
I
= 40 V, V
= 40 V, V
V
= 10 V, I
= 10 V, I
F
V
= 20 V, V
= 0 V, V
V
V
V
V
DS
V
V
b
= 60 A, di/dt = 100 A/µs
DS
V
DD
I
GS
DS
DS
F
GS
DS
GS
Test Conditions
F
= V
= 60 A, V
= 0 V, V
= 0 V, I
= 20 V, R
= 40 V, V
= 5 V, V
= 25 µA to I
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
I
I
F
F
GS
D
D
DS
GS
GS
GS
= 50 µA
= 25 µA
= 60 A, T
= 60 A, T
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
DS
D
= 10 V, I
GS
GS
GS
= 250 µA
D
D
L
GS
D
= 250 µA
= ± 20 V
= 60 A
= 20 A
= 0.8 Ω
= 10 V
= 20 A
= 0 V
F
= 0 V
J
J
= 50 µA
J
J
= 125 °C
= 175 °C
g
= 125 °C
= 175 °C
D
= 2.5 Ω
= 25 A
Min.
120
655
600
40
30
1
0.0035
0.0051
0.065
6000
1100
Typ.
700
130
100
100
1.0
2.1
35
25
40
15
80
60
S-80273-Rev. D, 11-Feb-08
Document Number: 71747
0.0045
0.0065
0.0069
0.0086
± 100
Max.
0.18
500
715
660
120
150
150
200
1.5
50
80
20
60
90
3
1
4
Unit
mV
nA
µA
pF
nC
µC
ns
ns
Ω
V
A
S
A
V
A