sum60n04-05c Vishay, sum60n04-05c Datasheet - Page 2

• Manufacturer Part Number: sum60n04-05c
• Description: N-channel 40-v D-s Mosfet With Current Sense Terminal
• Manufacturer: Vishay

SUM60N04-05C
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Current Sense Characteristics
Current Sense Ratio
Mirror Active Resistance
c
b
c
a
c
c
c
c
c
a
a
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
r
I
DS(on)
t
t
J
I
C
I
C
V
GS(th)
D(on)
C
Q
m(on)
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
rss
SD
r
= 25 °C, unless otherwise noted
iss
S
rr
fs
gs
gd
r
f
g
rr
g
I
C
D
I
V
V
V
V
D
V
V
= 25 °C)
= 3.5 A, V
DS
DS
GS
GS
DS
GS
≅ 25 A, V
I
= 40 V, V
= 40 V, V
V
= 10 V, I
= 10 V, I
F
V
= 20 V, V
= 0 V, V
V
V
V
V
V
DS
V
= 60 A, di/dt = 100 A/µs
DS
V
DD
I
GS
GS
DS
DS
F
DS
GS
Test Conditions
= V
b
= 60 A, V
= 0 V, V
= 10 V, I
= 0 V, I
= 20 V, R
= 40 V, V
= 5 V, V
GS
= 10 V, I
= 15 V, I
GEN
f = 1 MHz
GS
D
D
DS
GS
GS
GS
= 10 V, R
= 25 A, T
= 25 A, T
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
DS
= 10 V, I
D
GS
GS
D
GS
= 250 µA
D
D
L
GS
= 10 mA
= 250 µA
= ± 20 V
= 25 A
= 20 A
= 0.8 Ω
= 10 V
= 0 V
= 0 V
SENSE
J
J
J
J
G
= 125 °C
= 175 °C
= 125 °C
= 175 °C
D
= 25 A
= 2.5 Ω
= 2 Ω
1660
Min
120
2.5
40
0.0043
6400
1100
1880
0.06
Typ
630
115
150
2.2
1.0
2.5
5.5
35
35
35
15
60
80
45
S-71599-Rev. C, 30-Jul-07
Document Number: 72370
0.0054
0.0088
± 100
0.011
2100
Max
0.18
500
150
210
110
200
4.5
1.5
50
20
85
60
70
1
5
Unit
nA
µA
pF
nC
µC
ns
ns
Ω
Ω
Ω
V
A
S
A
V
A