si3433 Vishay, si3433 Datasheet - Page 3

• Manufacturer Part Number: si3433
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 71160
S-00624—Rev. A, 03-Apr-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.6 A
0.2
On-Resistance vs. Drain Current
= 10 V
4
V
SD
Q
3
g
V
- Source-to-Drain Voltage (V)
I
0.4
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
= 2.5 V
V
8
GS
T
0.6
= 1.8 V
6
J
= 150_C
12
0.8
V
T
GS
9
J
= 25_C
16
= 4.5 V
1.0
1.2
20
12
New Product
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 5.6 A
= 4.5 V
1
4
T
V
V
0
J
C
GS
DS
C
oss
- Junction Temperature (_C)
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 5.6 A
12
3
75
100
Si3433
16
www.vishay.com
4
125
150
20
5
2-3