si3433 Vishay, si3433 Datasheet - Page 2

• Manufacturer Part Number: si3433
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2-2
Si3433
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
a
- Drain-to-Source Voltage (V)
1.5
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
V
GS
2.5
= 5 thru 2.5 V
Symbol
3.0
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
3.5
1.5 V
2 V
1 V
4.0
New Product
V
DS
I
V
D
DS
^ - 1 A, V
= - 10 V, V
I
F
V
= - 16 V, V
V
V
V
V
V
V
V
V
GS
= - 1.7 A, di/dt = 100 A/ms
DS
GS
I
DS
V
S
DS
DS
DD
DD
Test Condition
GS
DS
= - 1.7 A, V
= - 4.5 V, I
= - 5 V, V
= V
= - 2.5 V, I
= - 16 V, V
= - 5 V, I
= - 10 V, R
= - 10 V, R
= - 1.8 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
D
GS
= - 250 mA
D
D
GS
GS
D
= - 5.6 A
L
L
= - 4.5 V
= - 4.8 A
= - 5.6 A
= 10 W
= 10 W
= - 1 A
= "8 V
= 0 V
= 0 V
J
20
16
12
D
= 85_C
G
8
4
0
= - 5.6 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
- 0.45
- 20
- Gate-to-Source Voltage (V)
1.0
T
C
1.5
0.025
0.048
0.066
Typ
11.5
- 0.7
1.7
25_C
16
18
25
80
45
30
= - 55_C
3
S-00624—Rev. A, 03-Apr-00
Document Number: 71160
2.0
"100
Max
0.042
0.057
0.080
- 1.2
160
125_C
17
36
50
90
50
- 1
- 5
2.5
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
3.0