si3805dv Vishay, si3805dv Datasheet - Page 8

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si3805dv

Manufacturer Part Number
si3805dv
Description
P-channel 20-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet
Si3805DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
www.vishay.com
8
10
10
10
10
10
10
10
250
200
150
100
10
50
-2
-3
-4
-5
-6
-7
-8
-1
0
- 50
0
Reverse Current vs. Junction Temperature
- 25
V
4
DS
T
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
V
Capacitance
R
25
= 20 V
8
V
50
R
= 10 V
12
75
100
V
16
R
= 15 V
125
150
20
A
= 25 °C, unless otherwise noted
0.001
0.01
0.1
10
20
15
10
1
5
0
0
0.0
0 .
0
1
Single Pulse Power, Junction-to-Ambient
T
J
= 150 °C
0.2
V
0.01
SD
Forward Diode Voltage
- Source-to-Drain Voltage (V)
0.4
Time (s)
0.1
T
S09-2110-Rev. B, 12-Oct-09
J
Document Number: 68912
= 25 °C
0.6
1
0.8
1.0
1
0

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