si3805dv Vishay, si3805dv Datasheet - Page 4

• Manufacturer Part Number: si3805dv
• Description: P-channel 20-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si3805DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
On-Resistance vs. Drain Current and Gate Voltage
10
15
12
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 3 A
1.5
1
3
V
DS
Output Characteristics
Q
V
- Drain-to-Source Voltage (V)
g
GS
3.0
I
- Total Gate Charge (nC)
D
= 2.5 V
- Drain Current (A)
Gate Charge
V
V
2
6
DS
GS
V
= 10 V
4.5
= 10 V thru 4 V
GS
V
GS
= 4.5 V
= 10 V
3
9
6.0
V
DS
V
V
= 16 V
GS
GS
12
4
7.5
= 2 V
= 3 V
A
9.0
15
5
= 25 °C, unless otherwise noted
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
C
- 25
rss
iss
0.4
V
V
4
DS
GS
Transfer Characteristics
V
C
T
0
GS
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
= - 4.5 V, I
T
C
Capacitance
25
0.8
= 125 °C
8
S09-2110-Rev. B, 12-Oct-09
T
50
D
V
C
Document Number: 68912
GS
= - 2.6 A
= 25 °C
T
1.2
12
C
= - 10 V, I
75
= - 55 °C
100
D
1.6
16
= - 3 A
125
2.0
150
20