mrf6s21190h Freescale Semiconductor, Inc, mrf6s21190h Datasheet - Page 2

• Manufacturer Part Number: mrf6s21190h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF6S21190HR3 MRF6S21190HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Equivalent Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Video Bandwidth @ 175 W PEP P
Gain Flatness in 60 MHz Bandwidth @ P
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
@ P
f = 2140 MHz
( - 30°C to +85°C)
DS
DS
GS
DS
DD
GS
DS
DS
DS
out
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 175 W CW
DS
D
D
D
GS
GS
GS
= 420 μAdc)
= 1600 mAdc, Measured in Functional Test)
= 4.2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
out
Characteristic
= 175 W CW, f = 2140 MHz
Test Methodology
out
where IM3 = - 30 dBc
(T
out
C
out
= 25°C unless otherwise noted)
= 54 W Avg.
GS
GS
= 175 W CW,
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
Delay
VBW
I
I
I
PAR
DS(on)
C
C
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
ΔΦ
ΔG
η
G
= 1600 mA, P
Φ
out
rss
iss
ps
D
F
DQ
= 1600 mA, 2110 - 2170 MHz Bandwidth
0.12
14.5
Min
5.5
—
—
—
—
—
—
26
—
—
—
—
—
—
—
—
1
2
out
= 54 W Avg., f = 2112.5 MHz and f =
0.016
0.21
0.16
0.52
Typ
185
526
- 38
- 13
2.8
2.8
6.1
2.1
16
29
50
28
—
—
—
2
1B (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
0.31
17.5
- 35
10
—
—
—
—
—
—
—
—
—
—
—
- 8
1
1
3
4
RF Device Data
dB/°C
μAdc
μAdc
μAdc
MHz
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
dB
pF
pF
pF
ns
%
°
°