mrf6s21190h Freescale Semiconductor, Inc, mrf6s21190h Datasheet

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mrf6s21190h

Manufacturer Part Number
mrf6s21190h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for W - CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1600 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Derate above 25°C
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
Power Gain — 16 dB
Drain Efficiency — 29%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
C
= 25°C
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF6S21190H
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRF6S21190HR3 MRF6S21190HSR3
2110 - 2170 MHz, 54 W AVG., 28 V
MRF6S21190HSR3
MRF6S21190HR3
MRF6S21190HSR3
MRF6S21190HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +68
- 0.5, +12
32, +0
Value
0.29
0.30
150
200
175
1
(1,2)
Rev. 1, 3/2008
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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mrf6s21190h Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 = 28 Volts 2110 - 2170 MHz AVG ...

Page 2

... Average Group Delay @ P = 175 W CW 2140 MHz out Part - to - Part Insertion Phase Variation @ 2140 MHz Gain Variation over Temperature ( - 30°C to +85°C) 1. Part internally matched both on input and output. MRF6S21190HR3 MRF6S21190HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...

Page 3

... Microstrip Z5 0.322″ x 0.580″ Microstrip Z6 0.313″ x 0.040″ Microstrip Z7, Z8 0.123″ x 0.121″ Microstrip Figure 1. MRF6S21190HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21190HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short Ferrite Bead C1, C4, C5 8.2 pF Chip Capacitors Chip Capacitor ...

Page 4

... MRF6S21190H/HS Rev. 0 Figure 2. MRF6S21190HR3(HSR3) Test Circuit Component Layout MRF6S21190HR3 MRF6S21190HSR3 4 C9 C10 C14 C15 C12 C13 C11 C2 C17 C16 C18 RF Device Data Freescale Semiconductor ...

Page 5

... I = 800 mA DQ 1200 mA 2400 mA 2000 mA 1600 Vdc 2135 MHz 2145 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21190HR3 MRF6S21190HSR3 200 5 ...

Page 6

... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21190HR3 MRF6S21190HSR3 6 TYPICAL CHARACTERISTICS − Vdc Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −20 −30 −40 IM7−L −50 IM7−U − ...

Page 7

... W - CDMA TEST SIGNAL −10 −20 −30 −40 Input Signal −50 −60 −70 −80 − −100 −110 −7.2 −9 Figure 14. Single - Carrier W - CDMA Spectrum 230 250 = 29%. 3.84 MHz Channel BW −ACPR in 3.84 MHz −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −1.8 3.6 −3.6 0 1.8 5.4 f, FREQUENCY (MHz) MRF6S21190HR3 MRF6S21190HSR3 7 ...

Page 8

... Figure 15. Series Equivalent Source and Load Impedance MRF6S21190HR3 MRF6S21190HSR3 2220 MHz = 10 Ω load f = 2060 MHz f = 2220 MHz Vdc 1600 mA Avg out source load MHz W W 2060 7.001 - j7.706 2.628 + j0.118 2080 6.859 - j7.408 2.602 + j0.415 2100 6 ...

Page 9

... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF6S21190HR3 MRF6S21190HSR3 9 ...

Page 10

... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Feb. 2008 • Initial Release of Data Sheet 1 Mar. 2008 • Added Fig. 12, MTTF versus Junction Temperature MRF6S21190HR3 MRF6S21190HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 11

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6S21190H Rev. 1, 3/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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