mrf6s27085h Freescale Semiconductor, Inc, mrf6s27085h Datasheet - Page 5

• Manufacturer Part Number: mrf6s27085h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
18
17
16
15
14
13
12
440 mA
675 mA
Figure 5. Two - Tone Power Gain versus
1
1240 mA
I
900 mA
DQ
= 1340 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg.
Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg.
Output Power
V
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
DD
= 28 Vdc
15.2
14.8
14.6
14.4
14.2
13.8
13.6
16.2
15.8
15.6
15.4
15.2
14.8
14.6
10
15
14
16
15
2600
2600
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
Probability (CCDF)
V
I
G
DQ
ACPR
η
ALT1
DD
ps
IRL
D
2610
2610
= 900 mA, Single−Carrier N−CDMA
= 28 Vdc, P
2620
2620
TYPICAL CHARACTERISTICS
out
2630
2630
100
= 20 W (Avg.)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2640
2640
V
I
DQ
DD
2650
2650
= 900 mA, Single−Carrier N−CDMA
= 28 Vdc, P
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
Probability (CCDF)
2660
2660
out
2670 2680
2670 2680
−20
−30
−40
−50
−60
= 45 W (Avg.)
G
0.1
ps
Figure 6. Third Order Intermodulation Distortion
V
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
DD
I
DQ
= 28 Vdc
ACPR
= 440 mA
2690
2690
ALT1
η
IRL
D
2700
2700
P
out
32
−32
38
36
34
−36
−40
−44
−48
675 mA
25
24
23
22
−42
−46
−50
−54
−58
1
MRF6S27085HR3 MRF6S27085HSR3
versus Output Power
, OUTPUT POWER (WATTS) PEP
−10
−12
−14
−16
−18
−20
−22
−24
−26
−10
−12
−14
−16
−18
−20
−22
−24
−26
10
900 mA
1340 mA
1240 mA
100
5