mrf6s27085h Freescale Semiconductor, Inc, mrf6s27085h Datasheet - Page 2

• Manufacturer Part Number: mrf6s27085h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6S27085HR3 MRF6S27085HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 2630 MHz and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 250 μAdc)
= 900 mAdc)
= 2.2 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
GSS
= 900 mA, P
IRL
DSS
DSS
g
η
rss
fs
ps
D
out
Min
—
—
—
—
—
—
14
22
—
—
1
2
= 20 W Avg. N - CDMA,
0.21
15.5
23.5
Typ
- 48
- 13
2.8
5.3
2.8
—
—
—
2
3A (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
0.3
- 45
10
17
—
—
—
- 9
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
pF
%
S