mrf6s19200h Freescale Semiconductor, Inc, mrf6s19200h Datasheet - Page 8

• Manufacturer Part Number: mrf6s19200h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF6S19200HR3 MRF6S19200HSR3
8
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 50% Clipping, Single - Carrier Test Signal
0
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
2
PEAK−TO−AVERAGE (dB)
4
10
10
10
10
8
7
6
5
90
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
6
110
Input Signal
TYPICAL CHARACTERISTICS
130
T
W - CDMA TEST SIGNAL
J
DD
, JUNCTION TEMPERATURE (°C)
8
= 28 Vdc, P
150
10
out
170
= 56 W Avg., and η
190
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
−9
210
Figure 14. Single - Carrier W - CDMA Spectrum
−7.2
D
= 29.5%.
−ACPR in 3.84 MHz
Integrated BW
230
−5.4
−3.6
250
f, FREQUENCY (MHz)
−1.8
Channel BW
3.84 MHz
0
Freescale Semiconductor
1.8
−ACPR in 3.84 MHz
Integrated BW
3.6
RF Device Data
5.4
7.2
9