mrf6s19200h Freescale Semiconductor, Inc, mrf6s19200h Datasheet - Page 7

• Manufacturer Part Number: mrf6s19200h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
20
19
18
17
16
1
1
Figure 7. Intermodulation Distortion Products
Figure 10. Power Gain and Drain Efficiency
G
V
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
3rd Order
η
DD
ps
D
= 28 Vdc, I
7th Order
5th Order
P
P
versus CW Output Power
out
out
DQ
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) PEP
versus Output Power
T
C
85_C
= 1600 mA
25_C
= −30_C
10
10
−1
−2
−3
−4
−5
1
0
30
Actual
Ideal
Compression (PARC) versus Output Power
η
−1 dB = 43.38 W
D
Figure 9. Output Peak - to - Average Ratio
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
DD
V
I
f = 1960 MHz
DQ
DD
40
TYPICAL CHARACTERISTICS
−30_C
= 28 Vdc, I
= 1600 mA
= 28 Vdc
100
P
100
out
85_C
, OUTPUT POWER (WATTS)
25_C
50
DQ
200
= 1600 mA, f = 1960 MHz
200
−2 dB = 62.72 W
40
30
20
10
0
60
−10
−20
−30
−40
−50
−60
−70
18.5
17.5
16.5
−3 dB = 87.05 W
18
17
70
1
0
Figure 8. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
DD
Figure 11. Power Gain versus Output Power
= 28 Vdc, P
80
20
IM5−L
P
out
out
IM5−U
versus Tone Spacing
TWO−TONE SPACING (MHz)
MRF6S19200HR3 MRF6S19200HSR3
40
, OUTPUT POWER (WATTS) CW
90
= 130 W (PEP), I
IM3−L
IM7−U
45
40
35
30
25
20
15
60
IM3−U
IM7−L
10
DQ
80
= 1600 mA
32 V
100
I
f = 1960 MHz
DQ
V
= 1600 mA
DD
120
= 24 V
28 V
100
140
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