mrf6vp41kh Freescale Semiconductor, Inc, mrf6vp41kh Datasheet - Page 6

• Manufacturer Part Number: mrf6vp41kh
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF6VP41KHR6 MRF6VP41KHSR6
6
65
60
55
50
45
40
35
20
Figure 10. Pulsed Output Power versus
25
P
in
, INPUT POWER (dBm) PULSED
Input Power
30
25_C
10
10
10
10
7
6
5
4
35
90
Figure 12. MTTF versus Junction Temperature
T
This above graph displays calculated MTTF in hours when the device
is operated at V
Duty Cycle = 20%, and η
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
V
I
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
C
DD
= −30_C
= 150 mA
= 50 Vdc
85_C
110
TYPICAL CHARACTERISTICS
40
T
130
J
DD
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
150
D
45
= 64%.
out
170
= 1000 W Peak, Pulse Width = 100 μsec,
22
21
20
19
18
17
16
15
14
13
12
Figure 11. Pulsed Power Gain and Drain Efficiency
1
190
V
I
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
DD
= 150 mA
= 50 Vdc
210
P
out
, OUTPUT POWER (WATTS) PULSED
230
versus Output Power
10
250
G
ps
100
T
Freescale Semiconductor
C
η
D
= −30_C
25_C
85_C
RF Device Data
1000 2000
100
90
80
70
60
50
40
30
20
10
0