mrf6vp41kh Freescale Semiconductor, Inc, mrf6vp41kh Datasheet - Page 5

• Manufacturer Part Number: mrf6vp41kh
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
1000
23
22
21
20
19
18
17
100
21
20
19
18
17
16
15
14
13
10
Figure 4. Capacitance versus Drain - Source Voltage
1
10
Figure 6. Pulsed Power Gain and Drain Efficiency
1
0
V
I
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
I
DD
DQ
= 150 mA
3600 mA
= 50 Vdc
= 6000 mA
Figure 8. Pulsed Power Gain versus
C
750 mA
1500 mA
rss
375 mA
P
P
10
V
out
out
150 mA
DS
C
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
, DRAIN−SOURCE VOLTAGE (VOLTS)
iss
C
versus Output Power
10
oss
Output Power
Measured with ±30 mV(rms)ac @ 1 MHz
V
100
GS
20
= 0 Vdc
V
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DD
100
= 50 Vdc
30
G
ps
η
D
TYPICAL CHARACTERISTICS
40
1000
1000 2000
2000
50
80
70
60
50
40
30
20
10
0
100
22
20
18
16
14
12
65
64
63
62
61
60
59
58
57
56
55
10
1
34
0
1
35
T
Figure 7. Pulsed Output Power versus
C
200
Figure 9. Pulsed Power Gain versus
P1dB = 60.33 dBm (1078.94 W)
V
= 25°C
DD
Figure 5. DC Safe Operating Area
36
P
V
= 30 V
out
DS
P
, OUTPUT POWER (WATTS) PULSED
, DRAIN−SOURCE VOLTAGE (VOLTS)
400
in
37
, INPUT POWER (dBm) PULSED
P3dB = 60.70 dBm (1174.89 W)
MRF6VP41KHR6 MRF6VP41KHSR6
35 V
Output Power
Input Power
38
600
10
40 V
39
800
I
Pulse Width = 100 μsec
Duty Cycle = 20%
T
DQ
J
40
T
= 150°C
= 150 Vdc, f = 450 MHz
J
45 V
V
I
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
= 200°C
DD
1000
41
= 150 mA
= 50 Vdc
50 V
42
T
1200
J
Ideal
= 175°C
100
Actual
43
1400
200
44
5