mrf6v13250hr3 Freescale Semiconductor, Inc, mrf6v13250hr3 Datasheet - Page 5

• Manufacturer Part Number: mrf6v13250hr3
• Description: 1300 Mhz, 250 W, 50 V Lateral N-channel Rf Power Mosfets
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
1000
100
70
60
50
40
30
20
10
10
24
23
22
21
20
19
18
17
Figure 3. Capacitance versus Drain- -Source Voltage
1
0
0
Figure 5. Pulsed Power Gain and Drain Efficiency
1
V
Pulse Width = 200, μsec Duty Cycle = 10%
20 V
DD
= 50 Vdc, I
50
25 V
Figure 7. Pulsed Efficiency versus
10
V
P
P
DS
out
out
100
DQ
, DRAIN--SOURCE VOLTAGE (VOLTS)
G
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
30 V
ps
versus Output Power
= 100 mA, f = 1300 MHz
10
C
C
C
oss
iss
150
rss
η
Output Power
D
Measured with ±30 mV(rms)ac @ 1 MHz
V
20
35 V
GS
= 0 Vdc
200
40 V
I
Pulse Width = 200 μsec
Duty Cycle = 10%
DQ
30
250
= 100 mA, f = 1300 MHz
TYPICAL CHARACTERISTICS — PULSED
100
45 V
300
40
V
DD
350
= 50 V
400
500
50
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
Figure 8. Pulsed Power Gain and Drain Efficiency
3
60
59
58
57
56
55
54
53
V
I
f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
25_C
25
23
21
19
17
15
13
11
T
DQ
DD
C
30
0
= --30_C
= 100 mA
= 50 Vdc
V
Pulse Width = 200 μsec, Duty Cycle = 10%
P1dB = 54.7 dBm
(293 W)
DD
85_C
= 50 Vdc, I
Figure 4. Pulsed Output Power versus
50
P
31
Figure 6. Pulsed Power Gain versus
out
20 V
, OUTPUT POWER (WATTS) PULSED
P
versus Output Power
out
100
DQ
P
10
, OUTPUT POWER (WATTS) PULSED
P2dB = 55.1 dBm
(326 W)
25 V
in
32
, INPUT POWER (dBm) PULSED
= 100 mA, f = 1300 MHz
MRF6V13250HR3 MRF6V13250HSR3
150
Output Power
30 V
Input Power
G
ps
P3dB = 55.4 dBm
(345 W)
33
η
D
35 V
200
I
Pulse Width = 200 μsec
Duty Cycle = 10%
34
DQ
100
40 V
250
= 100 mA, f = 1300 MHz
85_C
25_C
35
300
45 V
--30_C
V
36
DD
350
Actual
Ideal
= 50 V
500
70
60
50
40
30
20
10
0
400
37
5