mrf6v13250hr3 Freescale Semiconductor, Inc, mrf6v13250hr3 Datasheet

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mrf6v13250hr3

Manufacturer Part Number
mrf6v13250hr3
Description
1300 Mhz, 250 W, 50 V Lateral N-channel Rf Power Mosfets
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
1300 MHz. These devices are suitable for use in CW and pulsed applications.
• Typical Pulsed Performance: V
• Typical CW Performance: V
• Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V
• Characterized from 20 V to 50 V for Extended Power Range
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Total Device Dissipation @ T
Thermal Resistance, Junction to Case
RF Power transistors designed for CW and pulsed applications operating at
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
at all Phase Angles, 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec
Operation
For R5 Tape and Reel options, see p. 12.
Derate above 25°C
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
Pulsed (200 μsec,
calculators by product.
Select Documentation/Application Notes -- AN1955.
10% Duty Cycle)
Cycle, 50 Vdc, I
Signal Type
Signal Type
CW
DQ
= 100 mA, 1300 MHz
250 Peak
230 CW
C
P
P
(W)
(W)
out
out
= 25°C
DD
(1,2)
Characteristic
DD
= 50 Volts, I
Rating
= 50 Volts, I
DD
(MHz)
(MHz)
1300
1300
Operation
f
f
DQ
DQ
= 10 mA, T
DQ
(dB)
22.7
(dB)
20.0
G
G
= 100 mA
= 10 mA, 1300 MHz
ps
ps
C
57.0
53.0
(%)
(%)
η
η
= 61°C
D
D
(dB)
(dB)
IRL
IRL
--18
--25
Symbol
Symbol
V
R
Z
V
T
P
T
DSS
T
θJC
θJC
GS
stg
Document Number: MRF6V13250H
C
D
J
CASE 465- -06, STYLE 1
MRF6V13250HR3 MRF6V13250HSR3
CASE 465A- -06, STYLE 1
MRF6V13250HSR3
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HSR3
LATERAL N- -CHANNEL
1300 MHz, 250 W, 50 V
RF POWER MOSFETs
NI- -780
NI- -780S
-- 65 to +150
--0.5, +120
Value
--6.0, +10
Value
2.38
0.07
0.42
150
225
476
(2,3)
Rev. 1, 7/2011
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf6v13250hr3 Summary of contents

Page 1

... CASE 465- -06, STYLE 1 NI- -780 MRF6V13250HR3 CASE 465A- -06, STYLE 1 NI- -780S MRF6V13250HSR3 Symbol Value Unit V --0.5, +120 Vdc DSS V --6.0, +10 Vdc +150 °C stg T 150 ° 225 ° 476 W D 2.38 W/°C (2,3) Symbol Value Unit °C/W Z 0.07 θJC R 0.42 θJC MRF6V13250HR3 MRF6V13250HSR3 1 ...

Page 2

... Power Gain Drain Efficiency Input Return Loss Load Mismatch (In Freescale Application Test Fixture, 50 ohm system 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle VSWR 10:1 at all Phase Angles 1. Part internally input matched. MRF6V13250HR3 MRF6V13250HSR3 2 = 25°C unless otherwise noted) A Symbol I GSS ...

Page 3

... Z9* 0.116″ x 0.050″ Microstrip Z10 0.122″ x 0.050″ Microstrip Figure 1. MRF6V13250HR3(HSR3) Test Circuit Schematic — 1300 MHz Table 5. MRF6V13250HR3(HSR3) Test Circuit Component Designations and Values — 1300 MHz Part C1 μ Tantalum Capacitors C3, C11, C14 0.1 μ Chip Capacitors ...

Page 4

... Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250H/HS Rev C11 C12 C8 C10 C6 C17 C15 C18 C13 C16 C14 RF Device Data Freescale Semiconductor ...

Page 5

... P , OUTPUT POWER (WATTS) PULSED out Figure 6. Pulsed Power Gain versus Output Power --30_C G ps 85_C η D 25_C 10 100 P , OUTPUT POWER (WATTS) PULSED out versus Output Power MRF6V13250HR3 MRF6V13250HSR3 Ideal Actual 350 400 500 5 ...

Page 6

... Data for graph was collected in a water cooled test fixture. Figure 9. CW Power Gain and Drain Efficiency Figure 10. MTTF versus Junction Temperature — CW MRF6V13250HR3 MRF6V13250HSR3 6 TYPICAL CHARACTERISTICS — 700 700 mA 300 mA η Vdc D DD ...

Page 7

... W Peak DD DQ out f Z source MHz Ω 1300 5.32 + j4.11 1.17 + j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Test Network Z Z source load Z load Ω Output Matching Network MRF6V13250HR3 MRF6V13250HSR3 7 ...

Page 8

... MRF6V13250HR3 MRF6V13250HSR3 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 9 ...

Page 10

... MRF6V13250HR3 MRF6V13250HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 11 ...

Page 12

... Added CW information to data sheet including: -- Typical Performance Frequency tables Capable bullet and Thermal Characteristics Fig Power Gain and Drain Efficiency versus Output Power Fig. 10, MTTF versus Junction Temperature -- CW MRF6V13250HR3 MRF6V13250HSR3 12 R5 TAPE AND REEL OPTION REVISION HISTORY Description ...

Page 13

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF6V13250HR3 MRF6V13250HSR3 13 ...

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