mrf6v2300n Freescale Semiconductor, Inc, mrf6v2300n Datasheet - Page 5

• Manufacturer Part Number: mrf6v2300n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
1000
10
100
9
8
7
6
5
4
3
2
1
0
10
Figure 4. Capacitance versus Drain - Source Voltage
Figure 6. DC Drain Current versus Drain Voltage
1
0
−15
−20
−25
−30
−35
−40
−45
−50
−55
0
1
Figure 8. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 100 kHz Tone Spacing
DD
20
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
I
DQ
10
= 450 mA
650 mA
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
DRAIN VOLTAGE (VOLTS)
P
40
out
versus Output Power
C
C
, OUTPUT POWER (WATTS) PEP
C
oss
iss
rss
10
20
Measured with ±30 mV(rms)ac @ 1 MHz
V
GS
60
= 0 Vdc
1125 mA
2.5 V
30
80
900 mA
2.63 V
1350 mA
TYPICAL CHARACTERISTICS
100
V
GS
100
40
2.75 V
= 3 V
2.25 V
120
50
600
60
58
56
54
52
50
28
27
26
25
24
23
22
100
10
24
10
1
Figure 9. CW Output Power versus Input Power
1
650 mA
450 mA
Figure 7. CW Power Gain versus Output Power
900 mA
1125 mA
T
P1dB = 55.04 dBm (319 W)
C
= 25°C
26
Figure 5. DC Safe Operating Area
I
DQ
V
DS
= 1350 mA
P
out
, DRAIN−SOURCE VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS) CW
P
P3dB = 55.76 dBm (377 W)
in
MRF6V2300NR1 MRF6V2300NBR1
, INPUT POWER (dBm)
28
10
V
f = 220 MHz
100
DD
30
= 50 Vdc, I
V
f1 = 220 MHz
DD
= 50 Vdc
DQ
32
= 900 mA
100
Actual
Ideal
600
34
5