mrf6v2300n Freescale Semiconductor, Inc, mrf6v2300n Datasheet - Page 2

• Manufacturer Part Number: mrf6v2300n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6V2300NR1 MRF6V2300NBR1
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Drain- Source Breakdown Voltage
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Case Temperature 83°C, 300 W CW
(V
(V
(I
(V
(V
(V
(V
(V
(V
(V
D
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 150 mA, V
= 100 Vdc, V
= 50 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
GS
GS
= 800 μAdc)
= 900 mAdc, Measured in Functional Test)
= 2 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
(BR)DSS
I
I
I
DS(on)
C
C
GS(th)
GS(Q)
C
G
GSS
= 900 mA, P
IRL
DSS
DSS
η
3
oss
rss
iss
ps
D
Symbol
out
R
Min
110
Package Peak Temperature
1.5
—
—
—
—
—
—
—
24
66
—
θJC
1
= 300 W, f = 220 MHz, CW
1.63
0.28
2.88
25.5
260
Typ
120
268
- 16
2.6
68
—
—
—
—
IV (Minimum)
2 (Minimum)
A (Minimum)
Value
Class
Freescale Semiconductor
0.24
(1,2)
Max
2.5
3.5
50
10
27
—
—
—
—
—
—
- 9
3
RF Device Data
°C/W
μAdc
μAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
°C
pF
pF
pF
%