mrf1535t1 Freescale Semiconductor, Inc, mrf1535t1 Datasheet - Page 15

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mrf1535t1

Manufacturer Part Number
mrf1535t1
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1535T1
Manufacturer:
IXYS
Quantity:
101
RF Device Data
Freescale Semiconductor
D1
aaa
4X
M
2X
b2
aaa
aaa
D A
b1
aaa
4X
b3
M
M
c1
2X
D
M
D A
D
P
D A B
A
SEATING
PLANE
B
4
5
6
Y
E1
E
ZONE "J"
F
CASE 1264A - 02
Y
STYLE 1:
MRF1535FT1
3
1
2
PIN 1. SOURCE (COMMON)
TO - 272- 6
PLASTIC
ISSUE C
2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)
A1
6
DRAIN ID
A2
4X
e
A
D
A
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
4. DIMENSIONS b1 AND b3 DO NOT INCLUDE
5. CROSSHATCHING REPRESENTS THE EXPOSED
6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY.
6
5
4
PER ASME Y14.5M, 1994.
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
AREA OF THE HEAT SLUG.
DIM
aaa
bbb
A1
A2
D1
D2
E1
E2
b1
b2
b3
c1
A
D
E
F
P
e
0.098
0.038
0.040
0.926
0.492
0.246
0.126
0.193
0.078
0.088
0.007
MIN
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
0.810 BSC
0.608 BSC
0.170 BSC
0.025 BSC
0.193 BSC
INCHES
0.004
0.008
VIEW Y - Y
0.106
0.044
0.042
0.934
0.500
0.254
0.134
0.199
0.084
0.094
0.011
MAX
E2
MRF1535T1 MRF1535FT1
23.52
12.50
0.178
MILLIMETERS
MIN
2.49
0.96
1.02
6.25
3.20
4.90
1.98
2.24
20.57 BSC
15.44 BSC
4.32 BSC
0.64 BSC
4.90 BSC
0.10
0.20
23.72
12.70
0.279
MAX
2.69
1.12
1.07
6.45
3.40
5.05
2.13
2.39
1
3
2
DRAIN ID
NOTE 5
bbb
C
A
B
15

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