mrf1535t1 Freescale Semiconductor, Inc, mrf1535t1 Datasheet - Page 14

• Manufacturer Part Number: mrf1535t1
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF1535T1 MRF1535FT1
14
q
aaa
D1
M
D A
4X
L
2X
b2
c1
aaa
aaa
DATUM
PLANE
b1
b3
4X
M
M
H
D A
D
r1
B
A
4
5
6
Y
A2
A1
E1
E2
E
PACKAGE DIMENSIONS
TO - 272- 6 WRAP
Y
CASE 1264 - 09
STYLE 1:
3
1
2
MRF1535T1
A
DRAIN ID
PIN 1. SOURCE (COMMON)
ISSUE K
PLASTIC
4X
2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)
e
C
D
SEATING
PLANE
SEATING
PLANE
A
D
6
5
4
NOTES:
1. CONTROLLING DIMENSION: INCH .
2. INTERPRET DIMENSIONS AND TOLERANCES
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
4. DIMENSION D AND E1 DO NOT INCLUDE MOLD
5. DIMENSIONS b1 AND b3 DO NOT INCLUDE
6. CROSSHATCHING REPRESENTS THE EXPOSED
PER ASME Y14.5M, 1994.
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSION D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
AREA OF THE HEAT SLUG.
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
Ç Ç Ç Ç
DIM
aaa
A1
A2
D1
E1
E2
b1
b2
b3
c1
r1
A
D
E
L
q
e
VIEW Y - Y
0.098
0.000
0.100
0.928
0.806
0.296
0.248
0.241
0.060
0.193
0.078
0.088
0.007
0.063
MIN
0
0.193 BSC
_
INCHES
0.004
E2
0.108
0.004
0.104
0.932
0.814
0.304
0.252
0.245
0.070
0.199
0.084
0.094
0.011
0.068
MAX
6
Freescale Semiconductor
_
23.57
20.47
MILLIMETERS
MIN
2.49
0.00
2.54
7.52
6.30
6.12
1.52
4.90
1.98
2.24
0.18
1.60
0
4.90 BSC
_
0.10
1
23.67
20.68
3
2
MAX
2.74
0.10
2.64
7.72
6.40
6.22
1.78
5.05
2.13
2.39
0.28
1.73
RF Device Data
NOTE 6
DRAIN ID
6
_