mrf5s21150sr3 Freescale Semiconductor, Inc, mrf5s21150sr3 Datasheet - Page 6

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mrf5s21150sr3

Manufacturer Part Number
mrf5s21150sr3
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
0.0001
0.001
30
25
20
15
10
0.01
100
5
0
0.1
10
1
1
0
V
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
DD
= 28 Vdc, I
P
out
G
, OUTPUT POWER (WATTS) AVG. (W−CDMA)
ps
2
DQ
= 1300 mA, f1 = 2135 MHz,
PEAK−TO−AVERAGE (dB)
4
10
η
Freescale Semiconductor, Inc.
6
For More Information On This Product,
8
IM3
ACPR
Go to: www.freescale.com
100
10
−25
−30
−35
−40
−45
−50
−55
10
10
10
10
9
8
7
6
−100
−110
−120
100
−40
−60
−80
−20
−30
−50
−70
−90
This above graph displays calculated MTBF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I
−25
−IM3 @
3.84 MHz BW
−20
120
T
−15
J
, JUNCTION TEMPERATURE (°C)
D
2
for MTBF in a particular application.
140
−10
−ACPR @
3.84 MHz BW
f, FREQUENCY (MHz)
−5
3.84 MHz
Channel BW
160
0
+ACPR @
3.84 MHz BW
180
5
10
200
+IM3 @
3.84 MHz BW
15
2
20
220
25

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