mrf5s21150sr3 Freescale Semiconductor, Inc, mrf5s21150sr3 Datasheet - Page 5

• Manufacturer Part Number: mrf5s21150sr3
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

−25
−30
−35
−40
−45
−50
−55
−60
14
13
12
10
11
0.1
1
I
1600 mA
1300 mA
1000 mA
700 mA
DQ
3rd Order
5th Order
7th Order
= 1900 mA
V
Two−Tone Measurements, Center Frequency = 2140 MHz
DD
= 28 Vdc, P
P
out
, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
DD
10
1
= 28 Vdc
out
= 150 W (PEP), I
13
12
10
11
9
8
7
6
5
2060
Freescale Semiconductor, Inc.
ACPR
IM3
For More Information On This Product,
2080
G
η
IRL
ps
10
100
DQ
= 1300 mA
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
2100
DD
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= 28 Vdc, P
f, FREQUENCY (MHz)
2120
out
1000
2140
100
= 33 W (Avg.), I
2160
−25
−30
−35
−40
−45
−50
−55
−60
−65
58
57
56
55
54
53
52
51
50
49
48
DQ
2180
35
1
= 1300 mA
P1dB = 52.95 dBm (197 W)
I
36
DQ
2200
= 700 mA
1000 mA
P3dB = 53.58 dBm (228 W)
37
2220
P
38
out
35
30
25
20
−28
−32
−36
−40
−44
, OUTPUT POWER (WATTS) PEP
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
P
DD
39
10
in
, INPUT POWER (dBm)
1300 mA
= 28 Vdc
40
−10
−15
−20
−25
−30
V
Pulsed CW, 5 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
DD
1900 mA
1600 mA
41
= 28 Vdc, I
42
100
43
DQ
Ideal
= 1300 mA
44
Actual
45
46
1000
47