mrf5s9100n Freescale Semiconductor, Inc, mrf5s9100n Datasheet - Page 6

• Manufacturer Part Number: mrf5s9100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF5S9100NR1 MRF5S9100NBR1
6
−70
−10
−20
−30
−40
−50
−60
19.5
18.5
17.5
0
20
19
18
17
0.1
Figure 7. Intermodulation Distortion Products
0
3rd Order
5th Order
7th Order
Figure 10. Power Gain versus Output Power
V
DD
= 12 V
30
16 V
P
out
versus Tone Spacing
TWO −TONE SPACING (MHz)
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
, OUTPUT POWER (WATTS) CW
DD
20 V
1
60
= 26 Vdc, P
24 V
90
50
45
40
35
30
25
20
15
10
out
5
0
1
= 96 W (PEP), I
V
N−CDMA IS−95 (Pilot, Sync, Paging,
Traffic Codes 8 through 13)
Gain, Efficiency and ALT1 versus Output Power
ACPR
G
Figure 9. Single - Carrier N - CDMA ACPR, Power
η
DD
ps
D
10
= 26 Vdc, I
120
ALT1
TYPICAL CHARACTERISTICS
P
DQ
out
I
f = 880 MHz
DQ
32 V
DQ
, OUTPUT POWER (WATTS) AVG.
= 950 mA
150
= 950 mA
= 950 mA, f = 880 MHz
100
180
10
10
Figure 11. MTTF Factor versus Junction Temperature
10
10
10
10
58
57
56
55
54
53
52
51
50
49
48
9
8
7
80
28
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
P1dB = 50.71 dBm (117 W)
Figure 8. Pulse CW Output Power versus
29
100
30
T
J
, JUNCTION TEMPERATURE (°C)
100
120
D
2
for MTTF in a particular application.
P3dB = 51.58 dBm (143 W)
31
P
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
−80
in
, INPUT POWER (dBm)
Input Power
140
32
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
DD
33
= 26 Vdc, I
160
Freescale Semiconductor
34
180
DQ
35
= 950 mA
RF Device Data
36
200
Ideal
Actual
37
2
220
38